Recent Developments of Numerical Calculation in Crystal Growth of SiC
نویسندگان
چکیده
منابع مشابه
SiC Bulk Single Crystal Growth
SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...
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ژورنال
عنوان ژورنال: Journal of the Vacuum Society of Japan
سال: 2017
ISSN: 1882-2398,1882-4749
DOI: 10.3131/jvsj2.60.313